S T M4472
V
G S
, G ate to S ource V oltage (V )
1200
1000
10
8
6
4
2
0
V
DS
=20V
I
D
=7A
C , C apacitance (pF )
800
600
400
200
C rs s
0
0
5
10
15
C oss
C is s
5
20
25
30
0
2
4
6
8
10
12
14 16
V
DS
, Drain-to S ource Voltage (V )
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
F igure 10. G ate C harge
250
S witching T ime (ns )
I
D
, Drain C urrent (A)
50
30
10
R
DS
100
60
Tf
TD(off)
Tr
(O
L
N)
im
it
10
ms
10
1s
DC
0m
s
TD(on)
10
1
V D
S =20V ,ID=1A
0.1
0.03
1
1
V G S =10V
V
G S
=10V
S ingle P ulse
T
A
=25 C
0.1
1
10 40
6 10
60 100 300 600
R g, G ate R es is tance (
Ω
)
V
DS
, Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
F igure 12. Maximum S afe
O perating Area
9
Thermal Resistance
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
1.
2.
3.
4.
R
thJ A
(t)=r (t) * R
thJ A
R
thJ A
=S ee Datas heet
T
J M-
T
A
= P
DM
* R
thJ A
(t)
Duty C ycle, D=t
1
/t
2
0.01
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
