S TM4472
N-Channel ELECTR ICAL CHAR ACTER ISTICS (T
A
= 25 C unless otherwise noted)
Typ C Max
Parameter
Condition
Min
Unit
S ymbol
5
OFF CHAR ACTE R IS TICS
VGS 0V, ID 250uA
40
Drain-S ource Breakdown Voltage
=
V
BVDS S
IDS S
=
1
uA
uA
VDS 32V, VGS 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
=
=
10
VGS
20V, VDS 0V
=
IGS S
=
b
ON CHAR ACTE R IS TICS
VGS (th)
1.8
18
23
3
1
VDS =VGS , ID = 250uA
Gate Threshold Voltage
V
m ohm
24
30
=
=
VGS 10V, ID 7A
VGS =4.5V, ID= 5A
VDS = 5V, VGS = 10V
Drain-S ource On-S tate R esistance
R DS (ON)
m ohm
ID(ON)
gFS
A
S
15
On-S tate Drain Current
=
=
5V, ID 7A
12.5
Forward Transconductance
VDS
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
700
140
80
PF
PF
PF
CIS S
COS S
CR S S
VDS =20 V, VGS = 0V
f =1.0MHZ
Output Capacitance
R everse Transfer Capacitance
c
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
tD(ON)
ns
ns
ns
ns
13.4
12.5
VDD = 20V
ID = 1 A
tr
R ise Time
VGS = 10V
R GE N = 3.3 ohm
tD(OFF)
Turn-Off Delay Time
Fall Time
43.3
8.5
tf
VDS =20V, ID =7A,VGS =10V
VDS =20V, ID =7A,VGS =4.5V
13.5
nC
Qg
Total Gate Charge
6.7
1.8
2.4
nC
nC
nC
Qgs
Qgd
Gate-S ource Charge
Gate-Drain Charge
VDS =20V, ID = 7 A
VGS =4.5V
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
