S T G 8206
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
= 25 C unless otherwise noted)
Parameter
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
g
FS
C
IS S
C
OS S
C
RSS
c
S ymbol
Condition
V
GS
= 0V, I
D
= 250uA
V
DS
= 16V, V
GS
= 0V
V
GS
= 12V,V
DS
= 0V
V
DS
= V
GS
, I
D
= 250uA
V
GS
= 4.5V, I
D
= 5A
V
GS
=2.5V, I
D
= 3A
V
DS
= 5V, I
D
=5A
Min Typ
C
Max Unit
20
1
V
uA
100 nA
0.5
0.8
16
24
15
1290
295
231
1.5
20
30
V
m ohm
m ohm
ON CHAR ACTE R IS TICS
b
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
Forward Transconductance
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
c
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
V
DS
=8V, V
GS
= 0V
f =1.0MH
Z
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
V
DD
= 10V,
I
D
= 1A,
V
GE N
= 4.5V,
R
L
= 10
ohm
R
GE N
= 10
ohm
V
DS
=10V, I
D
= 5A,
V
GS
=4.5V
41.8
10.3
86.4
34.2
20.2
2.7
5.1
ns
ns
ns
ns
nC
nC
nC
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
