S T G 8203
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
5
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is =2A
Min Typ Max Unit
0.8
1.2
V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
b
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
20
V
G S
=10,9,8,7,6,5,4,3V
25
25 C
V
G S
=2V
20
16
I
D
, Drain C urrent(A)
I
D
, Drain C urrent (A)
-55 C
15
T j=125 C
10
12
8
4
0
5
0
0.0
0
2
4
6
8
10
12
0.3
0.6
0.9
1.2
1.5
1.8
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
2.2
1500
1.8
1200
900
600
300
C rs s
0
0
2
4
6
8
C os s
10
12
F igure 2. Trans fer C haracteris tics
V
G S
=4V
I
D
=4A
R
DS (ON)
, On-R es is tance
(Normalized )
C , C apacitance (pF )
1.4
1.0
0.6
0.2
0
C is s
-50
-25
0
25
50
75
100 125
T j( C )
V
DS
, Drain-to S ource Voltage (V )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with
Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
