S T F 8220
900
C is s
750
V
G S
, G ate to S ource V oltage (V )
5
4
3
2
1
0
V
DS
=10V
I
D
=4A
C , C apacitance (pF )
600
C os s
450
300
C rs s
150
0
6
2
4
6
8
10
12
0
2
4
6
8
10
12
14 16
V
DS
, Drain-to S ource Voltage (V )
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
F igure 10. G ate C harge
600
S witching T ime (ns )
I
D
, Drain C urrent (A)
80
10
R
DS
100
60
10
T D (o ff)
Tr
Tf
T D (on)
(O
L
N)
im
it
10
ms
10
0m
1
DC
s
1s
1
1
V DS =10V ,ID=1A
VGS=
4
V
0.1
0.03
V
G S
=4V
S ingle P ulse
T
A
=25 C
0.1
1
10
30 50
6 10
60 100 300 600
R g, G ate R es is tance (
W
)
V
DS
, Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
1
F igure 12. Maximum S afe
O perating Area
Normalized Transient
Thermal Resistance
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
P(pk)
R
JA
(t ) = ( r t) * R
JA
R
JA
=80 °C/W
t
1
t
2
T
J
- T
A
= P * R
JA
(t)
Dut y Cycle , D = t1 / t2
0.01
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 13.
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
