STU/D9916L
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
5
Diode Forward Voltage
Symbol
V
SD
Condition
V
GS
= 0V, Is =15A
Min Typ Max Unit
1
1.3
V
C
DRAIN-SOURCE DIODE CHARACTERISTICS
b
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
20
V
GS
=10~4V
25
20
16
I
D
, Drain Current(A)
I
D
, Drain Current (A)
12
V
GS
=3V
8
4
V
GS
=2V
0
0
2
4
6
8
10
12
15
Tj=125 C
10
25 C
-55 C
5
0
0
0.5
1
1.5
2
2.5
3
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
1200
1000
2.2
1.8
Figure 2. Transfer Characteristics
V
GS
=10V
I
D
=20A
C, Capacitance (pF)
800
600
400
200
0
Crss
0
5
10
15
20
R
DS(ON)
, On-Resistance
Ciss
1.4
1.0
0.6
0.2
0
Coss
(Normalized)
25
30
-50
-25
0
25
50
75
100
125
V
DS
, Drain-to Source Voltage (V)
TJ, Junction Temperature ( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation with
Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
