STU/D9916L
SamHop Microelectronics Corp.
Preliminary Mar.25 2004
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
30V
FEATURES
( m
Ω
) Max
I
D
25A
R
DS(ON)
Super high dense cell design for low R
DS(ON
).
30@ V
GS
= 10V
40@ V
GS
= 4.5V
Rugged and reliable.
TO-252 and TO-251 Package.
D
D
G
S
G
D
S
G
SDU SERIES
TO-252AA(D-PAK)
SDD SERIES
TO-251(l-PAK)
S
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
a
@T
A
= 25 C
b
-Pulsed
Drain-Source Diode Forward Current
a
Maximum Power Dissipation
a
Operating Junction and Storage
Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Limit
30
20
25
63
20
50
-55 to 175
Unit
V
V
A
A
A
W
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1
R
JC
R
JA
3
50
C/W
C/W
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
