STU/D602S
B V
DS S
, Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125 150
V
DS
=V
G S
I
D
=250uA
1.3
I
D
=250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75
100 125 150
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
60
50
125 C
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
I
D
=10A
Is , S ource-drain current (A)
10.0
R
DS (on)
(m
Ω
)
40
75 C
30
20
10
0
25 C
25 C
125 C
75 C
0
2
4
6
8
10
1.0
0.2
0.4
0.6
0.8
1.0
1.2
V
G S
, G ate- S ource Voltage (V )
V
S D
, B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
