Green
Product
SamHop Microelectronics Corp.
STU/D602S
Aug 26,2006
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
60V
FEATURES
( m
Ω
) Max
I
D
22A
R
DS(ON)
Super high dense cell design for low R
DS(ON
).
30 @ V
GS
= 10V
38 @ V
GS
= 4.5V
Rugged and reliable.
TO-252 and TO-251 Package.
D
D
G
S
G
D
S
G
STU SERIES
TO-252AA(D-PAK)
STD SERIES
TO-251(l-PAK)
S
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @Ta
-Pulsed
b
a
Symbol
V
DS
V
GS
25 C
70 C
I
D
I
DM
a
Limit
60
20
22
17
60
15
50
Unit
V
V
A
A
A
A
Drain-Source Diode Forward Current
Maximum Power Dissipation
a
I
S
P
D
Ta= 25 C
Ta=70 C
Operating Junction and Storage
Temperature Range
T
J
, T
STG
35
-55 to 175
W
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
R
JA
3
50
C /W
C /W
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
