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STD432S 参数 Datasheet PDF下载

STD432S图片预览
型号: STD432S
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道逻辑电平增强模式场效应晶体管 [N-Channel Logic Level Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 9 页 / 897 K
品牌: SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
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S T U/D432S
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is = 20A
Min Typ Max Unit
0.91
1.3
V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
a
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
100
V
G S
=10V
80
V
G S
=4V
48
V
G S
=3.5V
60
c.
Start ing T
J
=25 c , L = 0.5 mH , R
G
= 25
W
, I
AS
= 23 A, V
DD
<
V
(BR)DSS
( See Figure13 )
-
60
I
D
, Drain C urrent(A)
I
D
, Drain C urrent (A)
36
-55 C
24
T j=125 C
12
0
25 C
40
V
G S
=3V
20
V
G S
=2.5V
0
0
0.5
1
1.5
2
2.5
3
0
0.7
1.4
2.1
2.8
3.5
4.2
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
20
F igure 2. Trans fer C haracteris tics
2.0
R
DS (ON)
, On-R es is tance
Normalized
1.8
1.6
1.4
1.2
1.0
0
V
G S
=10V
I
D
=10A
16
R
DS (on)
(m
W
)
12
8
4
V
G S
=4.5V
V
G S
=4.5V
I
D
=5A
V
G S
=10V
1
1
20
40
60
80
100
0
25
50
75
100
125
150
T j( C )
I
D
, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3