STU/D432S
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
5
Symbol
BV
DSS
I
DSS
I
GSS
a
Condition
V
GS
= 0V, I
D
= 250uA
V
DS
= 32V, V
GS
=0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250uA
V
GS
= 10V , I
D
=10A
V
GS
= 4.5V, I
D
=5A
V
DS
= 10V, V
GS
= 10V
V
DS
= 10V, I
D
= 10A
Min Typ Max Unit
40
1
V
uA
100 nA
1.25
1.6
7
9
30
28
1130
240
145
3
9
11
V
m ohm
m ohm
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
I
D(ON)
g
FS
b
Drain-Source On-State Resistance
On-State Drain Current
Forward Transconductance
A
S
P
F
P
F
P
F
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
SWITCHING CHARACTERISTICS
b
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 15V
I
D
= 10 A
V
GS
= 10V
R
GEN
= 3.3 ohm
V
DS
=15V, I
D
=10A,V
GS
=10V
V
DS
=15V, I
D
=10A,V
GS
=4.5V
V
DS
=15V, I
D
= 10A
V
GS
=10V
2
18
22
61
9.6
23.5
11.5
2.7
3.2
ns
ns
ns
ns
nC
nC
nC
nC
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
