S TU/D428S
E LE C TR IC AL C HAR AC TE R IS TIC S (T =25 C unless otherwise noted)
C
Typ Max
P arameter
C ondition
Min
Unit
V
S ymbol
a
DR AIN-S OUR C E DIODE C HAR AC TE R IS TIC S
Diode Forward Voltage
VS D
VG S = 0V, Is = 10A
0.95
1.3
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
60
20
15
VGS =4
V
25 C
Tj=1
50
40
30
VGS
=4
.5V
-55 C
GS
V
=
10V
10
5
20
10
0
VGS =3V
V
GS =2.5V
2.5
0
4.8
4.0
2.4
3.2
1.6
0.8
0
0
0.5
1
2
3
1.5
VDS , Drain-to-S ource Voltage (V)
VGS , Gate-to-S ource Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.0
15
1.8
1.6
1.4
1.2
1.0
0
12
9
VGS =4.5V
VGS =10V
VGS =10V
ID=10A
6
VGS =4.5V
ID=6A
3
1
150
0
25
125
50
100
1
75
12
24
36
48
60
Tj( C)
ID, Drain Current (A)
Tj, Junction Temperature ( C )
Figure 3. On-R esistance vs. Drain Current
and Gate Voltage
Figure 4. On-R esistance Variation with
Drain Current and Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
