S TU/D428S
E LE C TR IC AL C HAR AC TE R IS TIC S (T =25 C unless otherwise noted)
C
Typ C Max
Parameter
Condition
Min
Unit
S ymbol
5
OFF CHAR ACTE R IS TICS
VGS 0V, ID= 250uA
=
Drain-S ource Breakdown Voltage
40
V
BVDS S
IDS S
uA
uA
=
=
VDS 32V, VGS 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
1
VGS 20V, VDS 0V
IGS S
10
=
=
a
ON CHAR ACTE R IS TICS
1.7
1
3
VGS (th)
V
Gate Threshold Voltage
VDS =VGS , ID = 250uA
8
m ohm
m ohm
10
13
=
=
VGS 10V, ID 10A
VGS =4.5V, ID= 6A
VDS = 10V, VGS = 10V
Drain-S ource On-S tate R esistance
R DS (ON)
10
30
On-S tate Drain Current
ID(ON)
gFS
A
S
26
Forward Transconductance
=
=
10V, ID 10A
VDS
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance
1505
220
150
0.3
PF
PF
CIS S
VDS =20V, VGS = 0V
f =1.0MHZ
Output Capacitance
COS S
R everse Transfer Capacitance
Gate resistance
CR S S
PF
R g
VGS =0V, VDS = 0V, f=1.0MHZ
ohm
b
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
tD(ON)
ns
ns
ns
23
VDD = 15V
ID = 1 A
tr
R ise Time
19
85
27
VGS = 10V
R GE N = 6 ohm
tD(OFF)
Turn-Off Delay Time
Fall Time
tf
ns
Total Gate Charge
VDS =15V, ID =10A,VGS =10V
VDS =15V, ID =10A,VGS =4.5V
nC
nC
Qg
28
12.5
nC
nC
Qgs
Qgd
Gate-S ource Charge
Gate-Drain Charge
3
6
VDS =15V, ID = 10A
VGS =10V
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
