S TU/D2030P LS
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
C
Typ Max
P arameter
C ondition
Min
Unit
V
S ymbol
a
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
Diode F orward Voltage
-0.9
V
S D
V
G S = 0V, Is = -10A
-1.3
Notes
a.P ulse Test:P ulse Width 300us, Duty C ycle 2%.
b.G uaranteed by design, not subject to production testing.
25
20
15
VG S =-4V
20
VG S =-4.5V
V
V
G S =-5V
G S =-8V
15
10
5
Tj=125 C
10
5
VG S =-3V
V
G S =-10V
-55 C
25 C
0
0
0
0.7
1.4
2.1
2.8
3.5
4.2
0
0.5
1
2
3
1.5
2.5
-VDS , Drain-to-S ource Voltage (V)
-VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
60
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
G S =-10V
=-20A
50
40
I
D
VG S =-4.5V
VG S =-10V
30
20
V
G S =-4.5V
I
D
=-10A
10
0
0
-55
-25
50
75
5
10
15
20
25
125
100
0
25
Tj( C )
-ID, Drain C urrent (A)
T j, J unction T emperature ( C )
Figure 3. On-R esistance vs. Drain C urrent
and G ate Voltage
Figure 4. On-R esistance Variation with
Drain C urrent and Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
