S TP/B3055L2
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
5
Diode Forward Voltage
Symbol
b
Condition
V
GS
= 0V, Is =15A
Min Typ Max Unit
1.1
1.3
V
C
DRAIN-SOURCE DIODE CHARACTERISTICS
V
SD
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
20
V
GS
=10,9,8,7,6,5,4,3V
25
25 C
20
-55 C
16
I
D
, Drain Current(A)
I
D
, Drain Current (A)
12
15
Tj=125 C
8
V
GS
=2V
4
0
10
5
0
0.0
0
1
2
3
4
5
6
0.6
1.2
1.8
2.4
3.0
3.6
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
2.2
1500
1200
900
600
300
Crss
0
0
2
4
6
8
10
Figure 2. Transfer Characteristics
V
GS
=4.5V
I
D
=6A
C, Capacitance (pF)
R
DS(ON)
, On-Resistance
Normalized
12
1.8
1.4
1.0
0.6
0.2
0
Ciss
Coss
-50
-25
0
25
50
75
100 125
Tj( C)
V
DS
, Drain-to Source Voltage (V)
Figure 3. Capacitance
Figure 4. On-Resistance Variation with
Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
