STA4470
Ver 1.0
60
V
GS
=10V
15
I
D
, Drain Current(A)
V
GS
=3.5V
36
V
GS
=3V
I
D
, Drain Current(A)
48
V
GS
=4.5V
12
9
25 C
24
6
Tj=125 C
3
0
-55 C
12
V
GS
=2.5V
0
0
0.5
1
1.5
2
2.5
3
0
0.6
1.2
1.8
2.4
3.0
3.6
V
DS
, Drain-to-Source Voltage(V)
V
GS
, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
12
10
V
G S
=4.5V
8
6
V
G S
=10V
4
2
0
1
Figure 2. Transfer Characteristics
2.2
2.0
V
G S
=10V
I
D
=11A
R
DS(on)
, On-Resistance
Normalized
1.8
1.6
1.4
1.2
1.0
0
0
25
50
75
100
125
150
T j (
°C )
V
G S
=4.5V
I
D
=9.6A
R
DS(on)
(m
Ω
)
12
24
36
48
60
I
D
, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.4
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.4
I
D
=250uA
1.3
1.2
1.1
1.0
0.9
0.8
-50
-25
0
25
50
75
100 125 150
Vth, Normalized
Gate-Source Threshold Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
0
25
50
75
V
DS
=V
G S
I
D
=250uA
100 125 150
Tj, Junction Temperature( ° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
3
Figure 6. Breakdown Voltage Variation
with Temperature
Aug,18,2008
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
