STA4470
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
40V
FEATURES
Super high dense cell design for low R
DS(ON)
.
Rugged and reliable.
Suface Mount Package.
I
D
11A
R
DS(ON)
(m
Ω
) Max
12
@
VGS=10V
16
@
VGS=4.5V
PDIP-8
1
ABSOLUTE MAXIMUM RATINGS (
T
A
=25
°
C unless otherwise noted
)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J,
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
b
a
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
Limit
40
±20
11
8.9
55
2.5
1.6
-55 to 150
Units
V
V
A
A
A
W
W
°C
Maximum Power Dissipation
a
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
a
50
°C/W
Details are subject to change without notice.
Aug,18,2008
1
www.samhop.com.tw
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
