SDU/D30N03L
BV
DSS
, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50 -25
0
25
50
75 100 125 150
V
DS
=V
GS
I
D
=250uA
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
ID=250uA
6
0
25
50
75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
60
V
DS
=10V
Figure 6. Breakdown Voltage Variation
with Temperature
40
g
FS
, Transconductance (S)
Is, Source-drain current (A)
50
40
30
20
10
0
0
5
10
15
20
10
1.0
0.1
0.4
0.6
0.8
1.0
1.2
1.4
I
DS
, Drain-Source Current (A)
V
SD
, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
10
I
D
, Drain Current (A)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
300
200
100
1m
V
GS
, Gate to Source Voltage (V)
8
6
4
2
0
0
V
DS
=15V
I
D
=20A
10
R
DS
(O
N
i
)L
t
mi
10
s
10
0m
s
ms
1s
DC
1
0.5
0.1
V
GS
=10V
Single Pulse
Tc=25 C
5
10
15 20 25
30
35 40
1
10
30
60
Qg, Total Gate Charge (nC)
V
DS
, Drain-Source Voltage (V)
Figure 9. Gate Charge
4
Figure 10. Maximum Safe
Operating Area
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
