SDU/D30N03L
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
V
SD
Condition
V
GS
= 0V, Is = 25A
Min Typ Max Unit
1.3
V
DRAIN-SOURCE DIODE CHARACTERISTICS
a
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
60
V
GS
=10,9,8,7,6,5,4V
50
30
40
25 C
6
I
D
, Drain Current (A)
40
30
20
10
0
0
1
2
3
4
5
6
V
GS
=3V
I
D
, Drain Current (A)
Tj=125 C
20
10
-55 C
0
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
3000
1.3
Figure 2. Transfer Characteristics
R
DS(ON)
, Normalized
Drain-Source, On-Resistance
V
GS
=10V
1.2
Tj=125 C
1.1
1.0
0.9
0.8
0.7
25 C
-55 C
2500
C, Capacitance (pF)
2000
1500
1000
Coss
500
Crss
0
0
5
10
15
20
25
30
Ciss
0
10
20
30
40
V
DS
, Drain-to Source Voltage (V)
I
D
, Drain Current(A)
Figure 3. Capacitance
Figure 4. On-Resistance Variation with
Drain Current and Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
