SDT03N04
Ver 1.2
ELECTRICAL CHARACTERISTICS
(
T
A
=25
°
C unless otherwise noted
)
4
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
V
DS
=320V , V
GS
=0V
Min
Typ
Max
Units
V
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
Zero Gate Voltage Drain Current
I
DSS
Gate-Body Leakage Current
I
GSS
ON CHARACTERISTICS
V
GS(th)
Gate Threshold Voltage
R
DS(ON)
g
FS
Drain-Source On-State Resistance
Forward Transconductance
c
400
1
±100
uA
nA
V
GS
= ±30V , V
DS
=0V
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V , I
D
=1A
V
DS
=10V , I
D
=1A
2
2.9
3.5
0.9
4
4.0
V
ohm
S
DYNAMIC CHARACTERISTICS
C
ISS
C
OSS
C
RSS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
c
V
DS
=25V,V
GS
=0V
f=1.0MHz
186
31
6.3
pF
pF
pF
SWITCHING CHARACTERISTICS
t
D(ON)
tr
t
D(OFF)
tf
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=200V
I
D
=1A
V
GS
=10V
R
GEN
=25 ohm
V
DS
=200V,I
D
=1A,V
GS
=10V
V
DS
=200V,I
D
=1A,
V
GS
=10V
13
10
21
5.5
4.4
1.2
1.6
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Diode Forward Voltage
V
GS
=0V,I
S
=1A
0.79
1
1.4
A
V
Notes
_
a.Surface Mounted on FR4 Board,t < 10sec.
_
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Oct,08,2010
2
www.samhop.com.tw
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
