Green
Product
SDT03N04
Ver 1.2
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
400V
F E AT UR E S
S uper high dense cell design for low R
DS (ON
).
I
D
1.5A
R
DS(ON)
(
Ω
) Typ
3.5
@
VGS=10V
R ugged and reliable.
S urface Mount P ackage.
D
G
S
G
SO T - 22 3
S
ABSOLUTE MAXIMUM RATINGS (
T
A
=25
°
C unless otherwise noted
)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J,
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
b
b
a
Limit
400
±30
T
A
=25°C
T
A
=25°C
1.5
6
2.98
-55 to 150
Units
V
V
A
A
W
°C
Maximum Power Dissipation
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
a
42
°C/W
Details are subject to change without notice.
Oct,08,2010
1
www.samhop.com.tw
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
