S DM40N02
1.15
1.09
1.06
1.03
V
DS =V G S
1.10
1.05
1.00
ID=250uA
I
D=250uA
1.00
0.97
5
0.95
0.90
0.85
0.94
0.91
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
F igure 5. G ate T hreshold V ariation
with T emperature
36
20
10
30
24
18
12
V
DS =10V
12
1
6
0
T
J
=25 C
1.2
0
0.4
0.6
0.8
1.0
1.4
0
3
6
9
15
IDS , Drain-S ource C urrent (A)
V S D, B ody Diode F orward V oltage (V )
F igure 7. T ransconductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
40
5
V
DS =10V
t
i
m
i
L
4
3
2
)
10
1
N
I
D=4A
O
1
(
0
R DS
m
s
1
0
0
m
s
1
1
s
D
C
V
G S =4.5V
1
0
0.1
S ingle P ulse
T c=25 C
0.03
0
2
4
6
8
10 12 14 16
0.1
1
10 20
50
Qg, T otal G ate C harge (nC )
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
Operating Area
F igure 9. G ate C harge
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
