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SDM40N02 参数 Datasheet PDF下载

SDM40N02图片预览
型号: SDM40N02
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道é nhancement模式F屈服ê ffect晶体管 [N-Channel E nhancement Mode F ield E ffect Transistor]
分类和应用: 晶体晶体管功率场效应晶体管
文件页数/大小: 7 页 / 664 K
品牌: SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
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S DM40N02
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
5
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is =1.7A
Min Typ Max Unit
0.72 1.2
V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
b
Notes
a.S urface Mounted on FR 4 Board, t <=10sec.
b.Pulse Test:Pulse Width<= 300us, Duty Cycle<= 2%.
c.Guaranteed by design, not subject to production testing.
25
V
G S
=5,4,3,2V
20
20
25
I
D
, Drain C urrent(A)
I
D
, Drain C urrent (A)
15
15
10
V
G S
=1.5V
5
0
10
T j=125 C
5
-55 C
0
0.0
25 C
0
1
2
3
4
5
6
0.5
1
1.5
2
2.5
3
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
R
DS (ON)
, On-R es is tance(Ohms )
(Normalized)
10
12
3000
2500
1.8
1.6
1.4
1.2
1.0
0.8
F igure 2. Trans fer C haracteris tics
V
G S
=4.5V
I
D
=4A
C , C apacitance (pF )
2000
1500
1000
500
0
C is s
C os s
C rs s
0
2
4
6
8
0.6
-50
0
50
100
150
V
DS
, Drain-to S ource Voltage (V )
T j, J unction T emperature ( C )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with
Temperature
3