S DU/D3055L 2
1.06
1.03
1.00
0.97
0.94
0.91
-50 -25
0
25
50
75
100 125 150
V
DS
=V
GS
I
D
=250uA
B V
DS S
, Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.09
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
I
D
=250uA
5
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igur e 5. G ate T hr eshold V ar iation
with T emper atur e
36
F igur e 6. B r eak down V oltage V ar iation
with T emper atur e
20
g
F S
, T rans conductance (S )
24
18
12
6
0
0
3
6
9
12
15
V
DS
=10V
Is , S ource-drain current (A)
30
10
1
0
0.4
0.6
0.8
1.0
T
J
=25 C
1.2
1.4
I
DS
, Drain-S ource C urrent (A)
V
S D
, B ody Diode F orward V oltage (V )
F igur e 7. T r ansconductance V ar iation
with Dr ain C ur r ent
10
I
D
, Drain C urrent (A)
F igur e 8. B ody Diode F or war d V oltage
V ar iation with Sour ce C ur r ent
50
V
G S
, G ate to S ource V oltage (V )
8
6
4
2
0
0
V
DS
=10V
I
D
=6A
10
R
DS
(O
N
im
)L
it
10
10
0m
s
ms
11
DC
1s
0.1
0.03
V
G S
=4.5V
S ingle P ulse
T c=25 C
0.1
1
10
20
50
4
8
12
16
20 24 28 32
Qg, T otal G ate C harge (nC )
V
DS
, Drain-S ource V oltage (V )
F igur e 9. G ate C har ge
4
F igur e 10. M aximum Safe
O per ating A r ea
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
