S DU/D3055L2
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
C
IS S
C
OS S
C
RSS
c
S ymbol
Condition
V
GS
= 0V, I
D
= 250uA
V
DS
= 20V, V
GS
= 0V
V
GS
= 8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250uA
V
GS
=4.5V, I
D
= 6.0A
V
GS
=2.5V, I
D
= 5.2A
V
DS
= 5V, V
GS
= 4.5V
V
DS
= 10V, I
D
= 6.0A
Min Typ
C
Max Unit
20
1
100
0.7
34
45
20
17
705
280
65
60
70
V
uA
nA
V
m-ohm
m-ohm
ON CHAR ACTE R IS TICS
b
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
A
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
c
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
V
DS
=8V, V
GS
= 0V
f =1.0MH
Z
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
V
DD
= 10V,
I
D
= 1A,
V
GE N
= 4.5V,
R
L
= 10
ohm
R
GEN
= 6
ohm
V
DS
=10V,I
D
=6A,V
GS
=10V
V
DS
=10V,I
D
=6A,V
GS
=4.5V
V
DS
=10V, I
D
= 6A,
V
GS
=10V
2
10
15
35
20
25
9.3
2
2
ns
ns
ns
ns
nC
nC
nC
nC
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
