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RU1HC2H 参数 Datasheet PDF下载

RU1HC2H图片预览
型号: RU1HC2H
PDF下载: 下载PDF文件 查看货源
内容描述: 互补的先进的功率MOSFET [Complementary Advanced Power MOSFET]
分类和应用:
文件页数/大小: 12 页 / 341 K
品牌: RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
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RU1HC2H
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
V
GS
=0V,I
DS
=250µA
Drain-Source Breakdown Voltage
V
GS
=0V,I
DS
=-250µA
V
DS
=100V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
T
J
=85°C
V
DS
=-100V, V
GS
=0V
T
J
=85°C
V
GS(th)
I
GSS
Gate Threshold Voltage
V
DS
=V
GS
,I
DS
=250µA
V
DS
=V
GS
,I
DS
=-250µA
Gate Leakage Current
V
GS
=±20V, V
DS
=0V
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=2A
N
R
DS(ON)
(T
A
=25°C Unless Otherwise Noted)
RU1HC2H
Min.
Typ.
Max.
Parameter
Test Condition
Unit
N
P
N
P
N
P
N
P
100
-100
1
30
-1
-30
1.5
-1.5
2
-2
2.7
-2.7
±10
±10
75
80
155
85
95
V
µA
V
µA
µA
V
GS
=4.5V, I
DS
=1.5A
Drain-Source On-state Resistance
V
GS
=-10V, I
DS
=-2A
P
V
GS
=-4.5V, I
DS
=-1.5A
mΩ
170
195
175
Diode Characteristics
V
SD
I
SD
=1A, V
GS
=0V
Diode Forward Voltage
I
SD
=-1A, V
GS
=0V
N-Channel
I
SD
=3.5A,
dl
SD
/dt=100A/µs
P-Channel
I
SD
=-2.5A,
dl
SD
/dt=100A/µs
N
P
N
P
N
P
42
1.2
-1.2
V
V
t
rr
Reverse Recovery Time
ns
52
43
nC
75
Q
rr
Reverse Recovery Charge
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– MAR., 2011
2
www.ruichips.com