SH8M24
Data Sheet
N-ch
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max.
Conditions
Unit
Gate-source leakage
IGSS
−
−
−
−
10
−
1
μA VGS
=
20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 45
V
ID= 1mA, VGS=0V
μA VDS= 45V, VGS=0V
VDS= 10V, ID= 1mA
Zero gate voltage drain current
Gate threshold voltage
IDSS
−
1.0
−
−
−
VGS (th)
−
2.5
46
57
64
−
−
−
−
−
−
−
−
9.6
V
33
41
46
−
mΩ ID= 4.5A, VGS= 10V
mΩ ID= 4.5A, VGS= 4.5V
mΩ ID= 4.5A, VGS= 4V
Static drain-source on-state
resistance
∗
RDS (on)
∗
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Yfs
Ciss
3.5
S
VDS= 10V, ID= 4.5A
−
−
−
−
−
−
−
−
550
140
70
12
18
42
12
6.8
2.0
2.9
pF
pF
pF
ns
ns
ns
ns
VDS= 10V
VGS= 0V
f=1MHz
Coss
Crss
td (on)
∗
∗
∗
∗
∗
∗
∗
VDD 25V
I
V
R
R
D
= 2.5A
GS= 10V
= 10Ω
= 10Ω
t
r
Turn-off delay time
Fall time
td (off)
tf
L
G
Total gate charge
Gate-source charge
Qg
nC VDD 25V, VGS= 5V
nC ID= 4.5A
Qgs
Qgd
−
−
−
−
Gate-drain charge
∗Pulsed
nC RL= 5.6Ω, RG= 10Ω
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter
Symbol Min. Typ. Max.
Conditions
IS= 4.5A, VGS=0V
Unit
V
∗
Forward voltage
VSD
−
−
1.2
∗ Pulsed
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