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RRS100P03HZG
Datasheet
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Input capacitance
Symbol
Conditions
= 0V
Unit
pF
Min.
Typ.
3600
450
450
25
Max.
Ciss
Coss
Crss
V
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GS
= -10V
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
DS
f = 1MHz
*4
td(on)
V
⋍ -15V,V = -10V
DD GS
tr*4
I = -5A
60
D
ns
*4
td(off)
R ⋍ 3.0Ω
Turn - off delay time
Fall time
150
100
L
tf*4
R = 10Ω
G
llGate charge characteristics (Ta = 25°C)
Values
Typ.
39
Parameter
Symbol
Conditions
Unit
nC
Min.
Max.
*4
Qg
Total gate charge
-
-
-
-
-
-
V
⋍ -15V,
I = -10A,
DD
*4
Qgs
Gate - Source charge
Gate - Drain charge
8.5
D
V
GS
= -5V
*4
Qgd
13.5
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
-1.6
-40
IS
Continuous forward current
Pulse forward current
Forward voltage
-
-
-
-
-
-
A
A
V
T = 25℃
a
*1
ISP
*4
VSD
V
GS
= 0V, I = -10A
S
-1.2
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3/11
20200207 - Rev.001
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