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RRS100P03HZG
Datasheet
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llThermal resistance
Values
Unit
Parameter
Symbol
Min.
Typ. Max.
*2
RthJA
-
-
-
-
62.5 ℃/W
Thermal resistance, junction - ambient
*3
RthJA
89.2 ℃/W
lElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
-30
Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS
V
GS
= 0V, I = -1mA
D
-
-
V
ΔV
I = -1mA
ꢀ
ꢀ
(BR)DSS
D
Breakdown voltage
-
-
-24.1
-
-
mV/℃
temperature coefficient
ΔT
ꢀ
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ꢀ ꢀreferenced to 25℃
j
Zero gate voltage
drain current
IDSS
V
DS
= -30V, V = 0V
-1
μA
GS
IGSS
VGS(th)
ΔV
V
V
= ±20V, V = 0V
Gate - Source leakage current
Gate threshold voltage
-
-
-
±10
-2.5
μA
V
GS
DS
= -10V, I = -1mA
-1.0
DS
D
I = -1mA
D
ꢀ
ꢀ
GS(th)
Gate threshold voltage
temperature coefficient
-
3.3
9.0
-
mV/℃
ΔT
ꢀ
ꢀ
ꢀ ꢀreferenced to 25℃
j
V
GS
V
GS
V
GS
= -10V, I = -10A
-
-
-
-
12.6
D
Static drain - source
on - state resistance
*4
RDS(on)
= -4.5V, I = -5A
12.5 17.5
14.0 19.6
mΩ
D
= -4.0V, I = -5A
D
RG
|Y |*4
Gate resistance
f = 1MHz, open drain
3.0
-
Ω
S
Forward Transfer
Admittance
V
DS
= -10V, I = -10A
13
-
-
fs
D
*1 Pw ≤ 10μs, Duty cycle ≤ 1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a Cu board (40×40×0.8mm)
*4 Pulsed
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© 2019 ROHMCo., Ltd. All rights reserved.
2/11
20200207 - Rev.001
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