Datasheet
RGTVX2TS65
lThermal Resistance
Values
Typ.
-
Parameter
Thermal Resistance IGBT Junction - Case
Symbol
Rθ(j-c)
Unit
Min.
-
Max.
0.47
C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
650
Max.
-
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
ICES VCE = 650V, VGE = 0V
IGES VGE = ±30V, VCE = 0V
VGE(th) VCE = 5V, IC = 41.9mA
-
-
Collector Cut - off Current
-
-
10
±200
7.0
μA
nA
V
Gate - Emitter Leakage
Current
-
Gate - Emitter Threshold
Voltage
5.0
6.0
IC = 60A, VGE = 15V,
VCE(sat) Tj = 25°C
Tj = 175°C
Collector - Emitter Saturation
Voltage
-
-
1.5
1.9
-
V
1.85
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2021.02 - Rev.B
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