R6504KND3
Datasheet
Unit
llElectrical characteristics (Ta = 25°C)
Values
Min. Typ. Max.
Parameter
Symbol
Conditions
= 0V
Ciss
Coss
Crss
Input capacitance
V
V
-
-
-
-
-
-
-
270
270
15
-
-
-
-
-
-
-
GS
= 25V
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
pF
ns
DS
f = 1MHz
⋍ 300V, V = 10V
*6
td(on)
V
DD
16
GS
tr*6
I = 2A
17
D
*6
td(off)
R ⋍ 150Ω
Turn - off delay time
Fall time
30
L
tf*6
R = 10Ω
35
G
llGate charge characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
⋍ 300V
Unit
Min. Typ. Max.
*6
Qg
Total gate charge
V
-
-
-
-
10
2.5
4.8
6.5
-
-
-
-
DD
*6
Qgs
I = 4A
D
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
nC
V
*6
Qgd
V
GS
DD
= 10V
V(plateau)
V
⋍ 300V, I = 4A
D
*1 Limited only by maximum channel temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L≒100mH, V =50V, R =25Ω, STARTING T=25℃
DD
G
j
*4 T =25℃
C
*5 Mounted on a epoxy PCB FR4 (20mm x 20mm x 0.8mm)
*6 Pulsed
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3/11
20201030 - Rev.002
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