R6504KND3
Datasheet
Unit
llThermal resistance
Values
Min. Typ. Max.
Parameter
Symbol
*4
RthJC
Thermal resistance, junction - case
-
-
-
-
-
-
2.2
℃/W
*5
RthJA
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
147 ℃/W
Tsold
265
℃
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
V(BR)DSS
Conditions
Unit
V
Min. Typ. Max.
Drain - Source breakdown
voltage
V
V
= 0V, I = 1mA
D
650
-
-
GS
= 650V, V = 0V
DS
GS
Zero gate voltage
drain current
IDSS
T = 25°C
-
-
-
-
-
-
100
1000
±100
5
μA
j
T = 125°C
j
IGSS
V
GS
V
DS
V
GS
= ±20V, V = 0V
DS
Gate - Source leakage current
Gate threshold voltage
-
nA
V
VGS(th)
= V , I = 130μA
3
GS D
= 10V, I = 1.5A
D
Static drain - source
on - state resistance
*6
RDS(on)
T = 25°C
-
-
-
0.955 1.050
Ω
Ω
j
T = 125°C
j
2.02
3.3
-
-
RG
Gate resistance
f = 1MHz, open drain
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