EMZ1 / UMZ1N / IMZ1A
Transistors
Tr2 (PNP)
−35.0
−50
−100
−10
−8
VCE=−6V
Ta=25˚C
Ta=25˚C
Ta=100˚C
−31.5
−28.0
−24.5
−21.0
−17.5
−14.0
−10.5
−7.0
25˚C
40˚C
−20
−10
−500
−
−450
−400
−350
−300
−80
−60
−40
−20
−5
−250
−200
−6
−4
−2
−2
−1
−150
−100
−0.5
−50µA
−3.5µA
−0.2
−0.1
I
B
=0
−2.0
IB=0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
0
−0.4
−0.8
−1.2
−1.6
0
−1
−2
−3
−4
−5
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.12 Grounded emitter propagation
characteristics
Fig.13 Grounded emitter output
characteristics ( I )
Fig.14 Grounded emitter output
characteristics ( II )
500
500
−1
V
CE=−5V
−3V
−1V
Ta=25˚C
Ta=25˚C
Ta=100˚C
25˚C
−0.5
−40˚C
200
100
50
200
100
−0.2
−0.1
I
C/I
B
=50
20
10
50
−0.05
V
CE=−6V
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
−0.2 −0.5 −1 −2
−5 −10 −20
−50 −100
−0.2 −0.5 −1 −2
COLLECTOR CURRENT : I
−5 −10 −20 −50 −100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
C
(mA)
Fig.15 DC current gain vs. collector
current ( I )
Fig.17 Collector-emitter saturation
voltage vs. collector current ( I )
Fig.16 DC current gain vs. collector
current ( II )
20
1000
−1
lC/lB
=10
Ta=25˚C
CE=−12V
Ta=25˚C
f=1MHz
V
IE=0A
500
−0.5
IC=0A
10
5
200
100
−0.2
−0.1
Ta=100˚C
25˚C
−40˚C
2
−0.05
50
-0.5
-1
-2
-5
-10
-20
0.5
1
2
5
10
20
50 100
−0.2 −0.5 −1 −2
−5 −10 −20
−50 −100
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
EMITTER CURRENT : I
E
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.20 Collector output capacitance vs.
collector-base voltage
Fig.19 Gain bandwidth product vs.
emitter current
Fig.18 Collector-emitter saturation
voltage vs. collector current ( II )
Emitter input capacitance vs.
emitter-base voltage
Rev.A
4/4
ROHM [ ROHM ]
