EMZ1 / UMZ1N / IMZ1A
Transistors
zElectrical characteristics (Ta = 25°C)
Tr1 (NPN)
Parameter
Conditions
Symbol Min. Typ. Max. Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
I
I
I
C
=
=
50µA
1mA
BVCBO
BVCEO
BVEBO
60
50
7
−
−
−
−
−
V
V
V
C
E=
50µA
−
V
CB=60V
I
CBO
EBO
CE (sat)
FE
−
−
0.1 µA
0.1 µA
Emitter cutoff current
V
EB=7V
I
−
−
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
IC/IB=50mA/5mA
V
−
−
0.4
560
−
V
−
V
CE
=
6V, I
C
=
1mA
h
120
−
−
V
CE
=
=
12V, I
E
=−2mA, f=100MHz
180
2
MHz
f
T
Output capacitance
V
CB
12V, I
E
=
0A, f
=
1MHz
Cob
−
3.5 PF
Tr2 (PNP)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO −60
−
−
−
−
−
V
V
V
I
I
I
C
=
−50µA
−1mA
−50µA
Collector-emitter breakdown voltage BVCEO −50
C=
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
−6
−
−
E=
I
CBO
EBO
CE (sat)
FE
−
−0.1 µA
−0.1 µA
VCB
=−60V
Emitter cutoff current
I
−
−
V
EB
=−6V
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
V
−
−
−0.5
560
−
V
−
I
C/I
B
=
−50mA/−5mA
h
120
−
−
V
CE
=
−6V, I
C
=
−1mA
f
T
140
4
MHz
PF
V
V
CE
=
=
−12V, I
E
=
=
2mA, f
=100MHz
Output capacitance
Cob
−
5
CB
−12V, I
E
0A, f 1MHz
=
zPackaging specifications
Package
Taping
TR
Code
T2R
8000
T108
3000
Basic ordering
unit (pieces)
3000
Type
EMZ1
UMZ1N
IMZ1A
zElectrical characteristic curves
Tr1 (NPN)
0.50mA
50
10
8
100
30µA
27µA
24µA
21µA
VCE=6V
Ta=25˚C
Ta=25˚C
0.40mA
0.35mA
20
10
5
80
60
40
0.30mA
0.25mA
0.20mA
0.15mA
6
18µA
15µA
12µA
9µA
2
1
4
Ta=100˚C
0.10mA
0.05mA
0.5
6µA
2
0
20
0
3µA
0.2
0.1
IB=0A
I
B
=0A
12
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
0
4
8
16
20
0
0.4
0.8
1.2
1.6
2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics ( I )
Fig.3 Grounded emitter output
characteristics ( II )
Rev.A
2/4
ROHM [ ROHM ]
