欢迎访问ic37.com |
会员登录 免费注册
发布采购

BR24L02F-WE2 参数 Datasheet PDF下载

BR24L02F-WE2图片预览
型号: BR24L02F-WE2
PDF下载: 下载PDF文件 查看货源
内容描述: 高可靠性系列EEPROM的I2C总线 [High Reliability Series EEPROMs I2C BUS]
分类和应用: 存储内存集成电路光电二极管双倍数据速率可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
文件页数/大小: 41 页 / 767 K
品牌: ROHM [ ROHM ]
 浏览型号BR24L02F-WE2的Datasheet PDF文件第1页浏览型号BR24L02F-WE2的Datasheet PDF文件第2页浏览型号BR24L02F-WE2的Datasheet PDF文件第4页浏览型号BR24L02F-WE2的Datasheet PDF文件第5页浏览型号BR24L02F-WE2的Datasheet PDF文件第6页浏览型号BR24L02F-WE2的Datasheet PDF文件第7页浏览型号BR24L02F-WE2的Datasheet PDF文件第8页浏览型号BR24L02F-WE2的Datasheet PDF文件第9页  
BR24L□□-W Series,BR24S□□□-W Series
●Absolute
maximum ratings (Ta=25℃)
Parameter
Impressed voltage
symbol
V
CC
Limits
-0.3�½�+6.5
*1
450 (SOP8)
450 (SOP-J8)
*2
300 (SSOP-B8)
*3
330 (TSSOP-B8)
*4
310 (MSOP8)
*5
310 (TSSOP-B8J)
*6
300 (VSON008X2030)
*7
-65�½�+125
-40�½�+85
-0.3�½�Vcc+1.0
Unit
V
Technical Note
Permissible dissipation
Pd
mW
Storage temperature range
Action temperature range
Terminal voltage
Tstg
Topr
-
V
When using at Ta=25℃ or higher, 4.5mW(*1,*2),
3.0mW(*3,*7) 3.3mW(*4),3.1mW(*5,*6) to be reduced per 1℃
●Memory
cell characteristics (Ta=25℃, Vcc=1.8�½�5.5V)
*1
Limits
Parameter
Min.
Typ.
*2
Number of data rewrite times
1,000,000
-
*2
Data hold years
40
-
○Shipment
data all address FFh
*1 BR24L02/16/32-W : 1.7~5.5V
*2 Not 100% TESTED
Max.
-
-
Unit
Times
Years
●Recommended
operating conditions
Parameter
Power source voltage
Input voltage
*1 BR24L02/16/32-W : 1.7~5.5V
Symbol
Vcc
V
IN
Limits
1.8�½�5.5
*1
0�½�Vcc
Unit
V
●Electrical
characteristics (Unless otherwise specified, Ta=-40�½�+85℃, V
CC
=1.8�½�5.5V)
*1
Limits
Parameter
Symbol
Unit
Min.
Typ.
Max.
“HIGH” input voltage 1
“LOW” input voltage 1
“HIGH” input voltage 2
“LOW” input voltage 2
“HIGH” input voltage 3
*3
“HIGH” input voltage 3
*4
“LOW” input voltage 3
*2
“LOW” output voltage 1
“LOW” output voltage 2
Input leak current
Output leak current
Current consumption at
action
Standby current
V
IH1
V
IL1
V
IH2
V
IL2
V
IH3
V
IH3
V
IL3
V
OL1
V
OL2
I
LI
I
LO
I
CC1
I
CC2
I
SB
0.7Vcc
-0.3
*2
0.8Vcc
-0.3
*2
0.8Vcc
0.9Vcc
-0.3
-
-
-1
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Vcc +1.0
*2
0.3 Vcc
Vcc +1.0
*2
0.2 Vcc
Vcc +1.0
Vcc +1.0
0.1 Vcc
0.4
0.2
1
1
2.0
3.0
*5
*6
Conditions
V
V
V
V
V
V
V
V
V
μA
μA
mA
mA
μA
2.5≦Vcc≦5.5V
2.5≦Vcc≦5.5V
1.8≦Vcc<2.5V
1.8≦Vcc<2.5V
1.7≦Vcc<1.8V
1.7≦Vcc<1.8V
1.7≦Vcc<1.8V
I
OL
=3.0mA, 2.5V≦Vcc≦5.5V, (SDA)
I
OL
=0.7mA, 1.7V≦Vcc<2.5V, (SDA)
V
IN
=0V�½�Vcc
V
OUT
=0V�½�Vcc, (SDA)
Vcc=5.5V,fSCL=400kHz, tWR=5ms,
Byte write, Page write
Vcc=5.5V,fSCL=400kHz
Random read, current read,sequential read
Vcc=5.5V, SDA・SCL=Vcc
A0, A1, A2=GND, WP=GND
0.5
2.0
◎Radiation
resistance design is not made.
*1 BR24L02/16/32-W : 1.7�½�5.5V, *2 BR24L16/32-W, *3 BR24L02/16-W, *4 BR24L32-W
*5 BR24L01A/02/04/08/16-W, *6 BR24L32/64-W
www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.
3/40
2009.09 - Rev.D