BC847B
Transistors
1000
Ta=25°C
V
CE
=5V
f=1kHz
h
FE
-AC CURRENT GAIN
100
10
0.01
0.1
1
I
C
-COLLECTOR CURRENT (mA)
10
100
Fig.5 AC current gain vs. collector current
V
CE(SAT)
COLLECTOR EMITTER SATURATION VOLTAGE (V)
0.16
V
BE(ON)
BASE EMITTER VOLTAGE (V)
Ta=25°C
I
C
/I
B
=10
V
BE(SAT)
BASE EMITTER SATURATION VOLTAGE (V)
0.18
1.8
1.6
Ta=25°C
I
C
/I
B
=10
1.8
1.6
Ta=25°C
V
CE
=5V
0.12
1.2
1.2
0.08
0.8
0.8
0.04
0.4
0.4
0
0.1
1.0
10
I
C
-COLLECTOR CURRENT (mA)
100
0
0.1
1.0
10
I
C
-COLLECTOR CURRENT (mA)
100
0
0.1
1.0
10
I
C
-COLLECTOR CURRENT (mA)
100
Fig.6 Collector-emitter saturation
voltage vs. collector current
Fig.7 Base-emitter saturation
voltage vs. collector current
Fig.8 Grounded emitter propagation
characteristics
1000
Ta=25°C
I
C
/I
B
=10
1000
Ta=25°C
I
C
/I
B
=10
1000
40V
3V
Ta=25°C
I
C
=101
B1
=101
B2
t
on
-TURN ON TIME (ns)
t
S
-STORAGE TIME (ns)
t
r
-RISE TIME (ns)
V
CE
=15V
100
100
V
CC
=40V
100
10
1.0
10
I
C
-COLLECTOR CURRENT (mA)
100
10
1.0
10
I
C
-COLLECTOR CURRENT (mA)
100
10
1.0
10
I
C
-COLLECTOR CURRENT (mA)
100
Fig.9 Turn-on time vs. collector
current
Fig.10 Rise time vs. collector
current
Fig.11 Storage time vs. collector
current
Rev.A
3/5
ROHM [ ROHM ]
