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BC847B 参数 Datasheet PDF下载

BC847B图片预览
型号: BC847B
PDF下载: 下载PDF文件 查看货源
内容描述: NPN通用晶体管 [NPN General Purpose Transistor]
分类和应用: 晶体晶体管光电二极管IOT
文件页数/大小: 6 页 / 101 K
品牌: ROHM [ ROHM ]
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BC847B
Transistors
NPN General Purpose Transistor
BC847B
Features
1) BV
CEO
<
45V (I
C
=1mA)
2) Complements the BC857B.
External dimensions
(Unit : mm)
2.9±0.2
1.9±0.2
0.95
+0.2
−0.1
0.45±0.1
Package, marking, and Packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
BC847B
SST3
G1F
T116
3000
(1)
0.95 0.95
(2)
2.4
±
0.2
+
0.2
1.3
0.1
0~0.1
0.2Min.
(3)
+0.1
0.4
−0.05
+0.1
0.15
−0.06
All terminals have the same dimensions
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
When mounted on a 7×5×0.6mm ceramic board.
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
50
45
6
0.1
0.2
0.35
150
−65
to
+150
Unit
V
V
V
A
W
°C
°C
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
V
CE(sat)
V
BE(on)
h
FE
f
T
Cob
Cib
Min.
50
45
6
0.58
200
Typ.
200
3
8
Max.
15
5
0.25
0.6
0.77
450
Unit
V
V
V
nA
µA
V
V
MHz
pF
pF
V
CE
=5V,
I
E
=−20mA,
f=100MHz
V
CB
=10V,
I
E
=0,
f=1MHz
V
EB
=0.5V,
I
C
=0,
f=1MHz
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=30V
V
CB
=30V,
Ta=150°C
I
C
/I
B
=10mA/0.5mA
I
C
/I
B
=100mA/5mA
V
CE
/I
C
=5V/10mA
Conditions
Rev.A
1/5