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ESJA89-10A 参数 Datasheet PDF下载

ESJA89-10A图片预览
型号: ESJA89-10A
PDF下载: 下载PDF文件 查看货源
内容描述: [5.0mA 10kV 60nS Ultra-fast Recovery High Voltage Silicon Rectifier Diode]
分类和应用:
文件页数/大小: 43 页 / 1330 K
品牌: RICOH [ RICOH ELECTRONICS DEVICES DIVISION ]
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R3111x  
Operation of R3111xxxxB  
VDD  
Comparator  
Ra  
OUT pin should be pulled-up to  
DD or an external voltage level.  
OUT  
V
Rb  
Rc  
Vref  
Nch  
Tr.1  
GND  
Block Diagram (R3111xxxxB)  
1
2
3
Step  
1
I
2
II  
3
I
Released Voltage +VDET  
Detector Threshold  
Hysteresis  
B
A
Comparator ()  
Pin Input Voltage  
Detector Threshold  
Supply Voltage  
(VDD  
-
V
DET  
)
Comparator Output  
Tr.1  
L
H
L
Minimum Operating Voltage VDDL  
GND  
OFF ON OFF  
ON OFF ON  
Output Tr.  
Nch  
Rb+Rc  
Ra+Rb+Rc  
Pull-up Voltage  
I
×VDD  
Output Voltage  
Output  
Delay Time  
(VOUT  
)
Rb  
Ra+Rb  
II  
×VDD  
t
PLH  
GND  
Operation Diagram  
Explanation of operation  
Step 1. The output voltage is equal to the GND level.  
>
Step 2. At Point “A”, Vref VDD×(Rb+Rc)/(Ra+Rb+Rc) is true, as a result, the output of comparator is reversed  
=
from "L" to "H", therefore the output voltage becomes the pull-up voltage. The voltage level of Point A  
means a detector threshold voltage (VDET).  
<
Step 3. At Point “B”, Vref VDD×Rb/(Ra+Rb) is true, as a result, the output of comparator is reversed from "H" to  
=
"L", then the output voltage is equal to the GND level. The voltage level of Point B means a released  
voltage (+VDET).  
) The difference between a released voltage and a detector threshold voltage is a detector threshold hysteresis.  
13