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RT8004PCP 参数 Datasheet PDF下载

RT8004PCP图片预览
型号: RT8004PCP
PDF下载: 下载PDF文件 查看货源
内容描述: 3A,为4MHz ,同步降压型稳压器 [3A, 4MHz, Synchronous Step-Down Regulator]
分类和应用: 稳压器
文件页数/大小: 16 页 / 248 K
品牌: RICHTEK [ RICHTEK TECHNOLOGY CORPORATION ]
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RT8004  
The RT8004 contains an internal soft-start clamp that  
gradually raises the clamp on COMP after the EN/SS pin  
is pulled above 0.8V. The full current range becomes  
available on COMP after 1024 switching cycles. If a longer  
soft-start period is desired, the clamp on COMP can be  
set externally with a resistor and capacitor on the EN/SS  
pin as shown in Typical Application Circuit. The soft-start  
duration can be calculated by using the following formula:  
losses are proportional to VDD and thus their effects will  
be more pronounced at higher supply voltages.  
2. I2R losses are calculated from the resistances of the  
internal switches, RSW and external inductor RL. In  
continuous mode the average output current flowing  
through inductor L is choppedbetween the main switch  
and the synchronous switch. Thus, the series resistance  
looking into the LX pin is a function of both top and bottom  
MOSFET RDS(ON) and the duty cycle (DC) as follows :  
VIN  
TSS = RSS x CSS x ln(  
)(s)  
VIN 1.8V  
RSW = RDS(ON)TOP x DC + RDS(ON)BOT x (1DC)  
The RDS(ON) for both the top and bottom MOSFETs can be  
obtained from the Typical Performance Characteristics  
curves. Thus, to obtain I2R losses, simply add RSW to RL  
and multiply the result by the square of the average output  
current.  
Efficiency Considerations  
The efficiency of a switching regulator is equal to the output  
power divided by the input power times 100%. It is often  
useful to analyze individual losses to determine what is  
limiting the efficiency and which change would produce  
the most improvement. Efficiency can be expressed as:  
Other losses including CIN and COUT ESR dissipative  
losses and inductor core losses generally account for less  
than 2% of the total loss.  
Efficiency = 100% (L1+ L2+ L3+ ...)  
where L1, L2, etc. are the individual losses as a percentage  
of input power. Although all dissipative elements in the  
circuit produce losses, two main sources usually account  
for most of the losses: VDD quiescent current and I2R  
losses. The VDD quiescent current loss dominates the  
efficiency loss at very low load currents whereas the I2R  
loss dominates the efficiency loss at medium to high load  
currents. In a typical efficiency plot, the efficiency curve  
at very low load currents can be misleading since the  
actual power lost is of no consequence.  
Thermal Considerations  
In most applications, the RT8004 does not dissipate much  
heat due to its high efficiency. But, in applications where  
the RT8004 is running at high ambient temperature with  
low supply voltage and high duty cycles, such as in  
dropout, the heat dissipated may exceed the maximum  
junction temperature of the part. If the junction temperature  
reaches approximately 150°C, both power switches will  
be turned off and the SW node will become high  
impedance. To avoid the RT8004 from exceeding the  
maximum junction temperature, the user will need to do  
some thermal analysis. The goal of the thermal analysis  
is to determine whether the power dissipated exceeds  
the maximum junction temperature of the part. The  
temperature rise is given by :  
1. The VDD quiescent current is due to two components:  
theDC bias current as given in the electrical characteristics  
and the internal main switch and synchronous switch gate  
charge currents. The gate charge current results from  
switching the gate capacitance of the internal power  
MOSFET switches. Each time the gate is switched from  
high to low to high again, a packet of charge ΔQ moves  
from VDD to ground. The resulting ΔQ/Δt is the current out  
of VDD that is typically larger than the DC bias current. In  
continuous mode,  
TR = PD x θJA  
Where PD is the power dissipated by the regulator and  
θJA is the thermal resistance from the junction of the die  
to the ambient temperature. The junction temperature, TJ,  
is given by :  
IGATECHG = f(QT+QB)  
where QT and QB are the gate charges of the internal top  
and bottom switches. Both the DC bias and gate charge  
TJ = TA + TR  
Where TA is the ambient temperature.  
www.richtek.com  
12  
DS8004-03 September 2007