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RF2495 参数 Datasheet PDF下载

RF2495图片预览
型号: RF2495
PDF下载: 下载PDF文件 查看货源
内容描述: 900MHZ 3V低电流低噪声放大器/混频器 [900MHZ 3V LOW CURRENT LNA/MIXER]
分类和应用: 放大器
文件页数/大小: 6 页 / 1976 K
品牌: RFMD [ RF MICRO DEVICES ]
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RF2495  
Pin  
1
Function Description  
Interface Schematic  
Supply voltage for the LNA, bias circuits, and control logic. External RF  
VCC1  
bypassing is required. The trace length between the pin and the bypass  
capacitors should be minimized. The ground side of the bypass capaci-  
tors should connect immediately to ground plane.  
RF Input pin. This pin is internally matched for optimum noise figure  
from a 50source. This pin is internally DC-biased and, if connected  
to a device with DC present, should be blocked with a capacitor suit-  
able for the frequency of operation.  
VBIAS  
2
LNA_IN  
LNA IN  
GND1  
Ground connection. For best performance, keep traces physically short  
and connect immediately to ground plane.  
3
4
5
GND2  
GND1  
ATTN  
Ground connection for the LNA circuits. For best performance, keep  
traces physically short and connect immediately to ground plane.  
See pin 2.  
Attenuation pin. A logic high reduces LNA gain by 15dB.  
VCC  
ATTN  
GND2  
LNA Output pin. This pin requires a connection to V through an  
inductor.  
6
7
LNA OUT  
SOURCE  
CC  
LNA OUT  
Connection to source of MOSFET transistor used as mixer. Drain and  
source are symmetric.  
DRAIN  
GATE  
SOURCE  
Connection to drain of MOSFET transistor used as mixer.  
See pin 7.  
See pin 7.  
8
9
DRAIN  
GATE  
Connection to gate of MOSFET transistor used as mixer. Internally  
DC-biased. Use DC-blocking capacitor.  
Power control. A logic “low” turns the part off. A logic “high” (>1.6V)  
turns the part on.  
10  
PD  
VCC  
PD  
GND2  
This diode structure is used to provide electrostatic discharge protec-  
tion to 3kV using the Human body model. The following pins are pro-  
tected: 1, 3, 5, 9, 10.  
ESD  
VCC  
Rev A4 030220  
8-283