RF2495
Absolute Maximum Ratings
Parameter
Supply Voltage
Rating
-0.5 to +3.6
Unit
Caution! ESD sensitive device.
V
DC
Input RF Level
Operating Ambient Temperature
Storage Temperature
+10
-40 to +85
-40 to +150
dBm
°C
°C
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
T=25°C, V =3.0V
Overall
RF/LO Frequency Range
CC
Specifications
Usable range
850 to 940
800 to 1000
MHz
MHz
LNA
Gain
15.5
1.0
17.0
4.0
dB
dB
High gain state
Low gain state
Input IP3
-2.5
+11.0
+1.0
+12.5
1.9
dBm
dBm
dB
High gain state, RF IN=-25dBm
Low gain state, RF IN=-15dBm
High gain state
Noise Figure
2.2
13.5
dB
Low gain state
Input VSWR
Output VSWR
Mixer
1.67:1
1.67:1
Conversion Gain
-6.5
-6.0
+7.5
+10.0
-2
-5.5
-5.5
+11.0
+13.0
4.0
dB
dB
dBm
dBm
dBm
With LO=+2dBm
With LO=+4dBm
With LO=+2dBm
With LO=+4dBm
Input IP3
LO Input Level
Attenuation
ATTN Enable
ATTN Disable
Power Down
Chip Enable
Chip Disable
Power Supply
Voltage
V
-0.3
>1.6
0
V
V
Low gain state
High gain state
CC
CC
0.3
V
-0.3
>1.6
0
V
V
Voltage applied to PD pin
Voltage applied to PD pin
3.0
2.7 to 3.3
10
V
V
mA
uA
Specifications
Operating limits
Chip enabled
Chip disabled
Current Consumption
12
3.0
<1
8-282
Rev A4 030220
RFMD [ RF MICRO DEVICES ]
