RF2480
Specification
Typ.
Parameter
Unit
Condition
Min.
0
Max.
LO=880MHz, -5dBm; SSB
I&Q Amplitude=2V
RF Output (~900MHz)
Maximum Output Power
High-Linearity Output Power
Carrier Suppression
+4
dBm
dBm
dB
PP
-11
I&Q Amplitude=0.325V
PP
50
T=25°C; P
=-11dBm (meets CDMA base
OUT
station requirements); optimized I,Q DC off-
sets
35
dB
Over Temperature (Temperature cycled from
-40°C to +85°C after optimization at
T=25°C; P
T=25°C; P
offsets
=-11dBm)
OUT
Sideband Suppression
50
35
dB
dB
=-11dBm; optimized I,Q DC
OUT
Over Temperature (Temperature cycled from
-40°C to +85°C after optimization at
T=25°C; P
=-11dBm)
OUT
Output Impedance
Broadband Noise Floor
13-j:25
-153.0
Ω
dBm/Hz
At 20MHz offset, V =5V; Tied to V
:
REF
CC
ISIG, QSIG, IREF, and QREF.
LO=2000MHz, -5dBm; SSB
RF Output (~2000MHz)
Maximum Output Power
High-Linearity Output Power
Carrier Suppression
-7
-3
dBm
dBm
dB
I&Q Amplitude=2V
PP
-17
I&Q Amplitude=0.325V
PP
50
35
50
40
T=25°C; P =-17dBm; optimized I,Q DC
OUT
offsets
dB
dB
dB
Temperature cycled from -40°C to +85°C
after optimization at T=25°C; P =-17dBm
OUT
Sideband Suppression
T=25°C; P =-17dBm; optimized I,Q DC
OUT
offsets
Temperature cycled from -40°C to +85°C
after optimization at T=25°C; P =-17dBm
OUT
Output Impedance
Broadband Noise Floor
58-j11
-158.0
Ω
dBm/Hz
At 20MHz offset, V =5V; Tied to V
:
REF
CC
ISIG, QSIG, IREF, and QREF.
Power Down
Turn On/Off Time
PD Input Resistance
Power Control “ON”
Power Control “OFF”
Power Supply
Voltage
100
2.8
ns
kΩ
V
50
Threshold voltage
Threshold voltage
1.0
1.2
5
V
V
V
mA
μA
Specifications
Operating Limits
Operating
4.5
6.0
25
Current
50
Power Down
Rev A4 060329
5-25
RFMD [ RF MICRO DEVICES ]
