RF2480
Absolute Maximum Ratings
Caution! ESD sensitive device.
Parameter
Rating
Unit
Supply Voltage
-0.5 to +7.5
V
DC
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Input LO and RF Levels
Operating Ambient Temperature
Storage Temperature
+10
-40 to +85
-40 to +150
dBm
°C
°C
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
T=25°C, V =5V
Carrier Input
Frequency Range
Power Level
CC
800
-6
2500
+6
MHz
dBm
Input VSWR
4.5:1
2:1
2:1
At 900MHz unmatched
At 1800MHz unmatched
At 2500MHz unmatched
Modulation Input
Frequency Range
Reference Voltage (V
DC
250
MHz
V
)
3.0
REF
Maximum Modulation (I&Q)
V
±1.0
V
REF
Gain Asymmetry
Quadrature Phase Error
Input Resistance
0.2
3
30
dB
°
kΩ
μA
Input Bias Current
40
LO=800MHz, -5dBm; SSB
TETRA I&Q Amplitude=2V
Over operating temperature.
RF Output (~800MHz)
Maximum Output Power
-3
-6
0
+2
dBm
dBm
PP
High-Linearity Output Power
-5
TETRA I&Q Amplitude=1.1V with an
PP
ACPR of -47dBc. Over operating tempera-
ture.
Adjacent Channel
Power Rejection
-47
-52
dBc
TETRA modulation applied with
P
=-5dBm. Over operating temperature.
OUT
Output P1dB
IM3 Suppression
+2
-39
+3
-40
dBm
dBc
Over operating temperature.
2kHz offset (9kHz, 11kHz) at -6dBm/tone.
Over operating temperature.
IM5 Suppression
IM7 Suppression
-49
-49
-59
-71
dBc
dBc
2kHz offset (9kHz, 11kHz) at -6dBm/tone.
Over operating temperature.
2kHz offset (9kHz, 11kHz) at -6dBm/tone.
Over operating temperature.
Carrier Suppression
Sideband Suppression
Broadband Noise Floor
-25
-25
-30
-30
-150
dBc
dBc
dBm/Hz
Unadjusted performance.
Unadjusted performance.
26MHz offset with TETRA signal applied
-145
P
=-5dBm.
OUT
5-24
Rev A4 060329