RF2422
Absolute Maximum Ratings
Parameter
Supply Voltage
Rating
-0.5 to +7.5
Unit
Caution! ESD sensitive device.
V
DC
Input LO and RF Levels
Operating Ambient Temperature
Storage Temperature
+10
-40 to +85
-40 to +150
dBm
°C
°C
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
T=25°C, V =5V
Carrier Input
Frequency Range
Power Level
CC
800
-6
2500
+6
MHz
dBm
Input VSWR
5:1
At 900MHz
1.8:1
1.2:1
At 1800MHz
At 2500MHz
5
Modulation Input
Frequency Range
Reference Voltage (V
DC
2.0
250
MHz
V
)
3.0
REF
Maximum Modulation (I&Q)
V
±1.0
V
REF
Gain Asymmetry
Quadrature Phase Error
Input Resistance
Input Bias Current
RF Output
0.2
3
30
dB
°
kΩ
µA
40
LO=2GHz and -5dBm, I&Q=2.0V , SSB
PP
Output Power
-3
+3
dBm
Output Impedance
Output VSWR
50
3.5:1
1.3:1
1.15:1
-35
35
35
35
Ω
At 900MHz
At 2000MHz
At 2500MHz
Harmonic Output
Sideband Suppression
Carrier Suppression
-30
25
30
30
dBc
dB
dB
IM Suppression
dB
Intermodulation of the carrier and the
desired RF signal
3
25
30
dB
Intermodulation of baseband signals
Broadband Noise Floor
At 20MHz offset, V =5V.
CC
Tied to V
: ISIG, QSIG, IREF, and QREF.
REF
-145
-152
dBm/Hz
dBm/Hz
At 850MHz
At 1900MHz
Power Down
Turn On/Off Time
PD Input Resistance
Power Control “ON”
Power Control “OFF”
Power Supply
Voltage
100
2.8
ns
kΩ
V
50
Threshold voltage
Threshold voltage
1.0
1.2
5
V
V
V
mA
µA
Specifications
Operating Limits
Operating
4.5
6.0
50
25
Current
45
Power Down
5-30
Rev A5 010817