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NBB-502_06 参数 Datasheet PDF下载

NBB-502_06图片预览
型号: NBB-502_06
PDF下载: 下载PDF文件 查看货源
内容描述: 级联宽带的GaAs MMIC放大器DC至4GHz [CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz]
分类和应用: 放大器
文件页数/大小: 8 页 / 186 K
品牌: RFMD [ RF MICRO DEVICES ]
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NBB-502  
Typical Bias Configuration  
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.  
VCC  
RCC  
1,2,3  
L choke  
(optional)  
4
8
In  
Out  
C block  
C block  
VDEVICE  
5,6,7,9  
VD = 3.9 V  
Recommended Bias Resistor Values  
Supply Voltage, V (V)  
5
8
10  
174  
12  
15  
20  
CC  
Bias Resistor, R (Ω)  
31  
117  
231  
317  
460  
CC  
Application Notes  
Die Attach  
The die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically connects the  
ground to the trace on which the chip is mounted, and establishes the thermal path by which heat can leave the chip.  
Wire Bonding  
Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are acceptable  
practices for wire bonding.  
Assembly Procedure  
Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom metallization are gold. Conductive  
silver-filled epoxies are recommended. This procedure involves the use of epoxy to form a joint between the backside  
gold of the chip and the metallized area of the substrate. A 150°C cure for 1 hour is necessary. Recommended epoxy is  
Ablebond 84-1LMI from Ablestik.  
Bonding Temperature (Wedge or Ball)  
It is recommended that the heater block temperature be set to 160°C±10°C.  
4-60  
Rev A5 060124