NBB-502
Absolute Maximum Ratings
Parameter
RF Input Power
Power Dissipation
Device Current
Channel Temperature
Operating Temperature
Storage Temperature
Rating
+20
300
70
200
-45 to +85
-65 to +150
Unit
Caution! ESD sensitive device.
dBm
mW
mA
°C
°C
°C
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Exceeding any one or a combination of these limits may cause permanent damage.
Specification
Parameter
Unit
Condition
Min.
Typ.
Max.
V =+3.9V, I =35mA, Z =50Ω, T =+25°C
Overall
D
CC
0
A
Small Signal Power Gain, S21
19.0
16.0
20.5
19.0
17.0
±0.8
dB
dB
dB
dB
f=0.1GHz to 1.0GHz
f=1.0GHz to 2.0GHz
f=2.0GHz to 4.0GHz
f=1.0GHz to 3.0GHz
Gain Flatness, G
F
Input and Output VSWR
1.55:1
1.50:1
1.55:1
4.2
f=0.1GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 10.0GHz
BW3 (3dB)
Bandwidth, BW
GHz
Output Power @
-1dB Compression, P1dB
13.0
14.0
4.0
dBm
dBm
dB
f=2.0GHz
f=6.0GHz
f=3.0GHz
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
+23.0
-17.0
3.9
dBm
dB
V
f=2.0GHz
f=0.1GHz to 10.0GHz
Device Voltage, V
3.6
4.2
D
Gain Temperature Coefficient,
-0.0015
dB/°C
δG /δT
T
MTTF versus Temperature
@ ICC=35mA
Case Temperature
Junction Temperature
MTTF
85
109.4
>1,000,000
°C
°C
hours
Thermal Resistance
θ
179
°C/W
JC
JT – TCASE
-------------------------- = θJC(°C ⁄ Watt)
VD ⋅ ICC
4-58
Rev A5 060124
RFMD [ RF MICRO DEVICES ]
