欢迎访问ic37.com |
会员登录 免费注册
发布采购

ERJ-8GEY0R00 参数 Datasheet PDF下载

ERJ-8GEY0R00图片预览
型号: ERJ-8GEY0R00
PDF下载: 下载PDF文件 查看货源
内容描述: 280W的GaN宽波段脉冲功率放大器 [280W GaN WIDE-BAND PULSED POWER AMPLIFIER]
分类和应用: 放大器脉冲功率放大器
文件页数/大小: 10 页 / 745 K
品牌: RFMD [ RF MICRO DEVICES ]
 浏览型号ERJ-8GEY0R00的Datasheet PDF文件第2页浏览型号ERJ-8GEY0R00的Datasheet PDF文件第3页浏览型号ERJ-8GEY0R00的Datasheet PDF文件第4页浏览型号ERJ-8GEY0R00的Datasheet PDF文件第5页浏览型号ERJ-8GEY0R00的Datasheet PDF文件第6页浏览型号ERJ-8GEY0R00的Datasheet PDF文件第7页浏览型号ERJ-8GEY0R00的Datasheet PDF文件第8页浏览型号ERJ-8GEY0R00的Datasheet PDF文件第9页  
RFHA1020
280W GaN WIDE-BAND PULSED
POWER AMPLIFIER
Package: Flanged Ceramic, 2 Pin
Features
Wideband Operation: 1.2GHz
to 1.4GHz
Advanced GaN HEMT
Technology
Advanced Heat-Sink
Technology
Supports Multiple Pulse
Conditions
RF IN
VG
Pin 1 (CUT)
GND
BASE
RF OUT
VD
Pin 2
10% to 20% Duty Cycle
100s to 1ms Pulse Width
Functional Block Diagram
Integrated Matching
Components for High
Terminal Impedances
50V Operation Typical
Performance:
Product Description
The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-band
pulsed radar, air traffic control and surveillance and general purpose broadband
amplifier applications. Using an advanced high power density Gallium Nitride (GaN)
semiconductor process, these high performance amplifiers achieve high output
power, high efficiency, and flat gain over a broad frequency range in a single pack-
age. The RFHA1020 is a matched power transistor packaged in a hermetic, flanged
ceramic package. The package provides excellent thermal stability through the use
of advanced heat sink and power dissipation technologies. Ease of integration is
accomplished through the incorporation of single, optimized matching networks
that provide wideband gain and power performance in a single amplifier.
Output Pulsed Power: 280W
Pulse Width: 100s, Duty Cycle
10%
Small Signal Gain: 15dB
High Efficiency (55%)
- 40°C to 85°C Operating
Temperature
Applications
Radar
Air Traffic Control and
Surveillance
General Purpose Broadband
Amplifiers
Ordering Information
RFHA1020S2
RFHA1020SB
RFHA1020SQ
RFHA1020SR
RFHA1020TR13
RFHA1020PCBA-410
2-Piece sample bag
5-Piece bag
25-Piece bag
50 Pieces on 7” short reel
250 Pieces on 13” reel
Fully assembled evaluation board 1.2GHz to 1.4GHz; 50V
operation
Optimum Technology Matching
®
Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
DS120508
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
1 of 10