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CGA-6618 参数 Datasheet PDF下载

CGA-6618图片预览
型号: CGA-6618
PDF下载: 下载PDF文件 查看货源
内容描述: 双CATV 1MHz至1000MHz的高线性度的GaAs HBT放大器 [DUAL CATV 1MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER]
分类和应用: 放大器有线电视
文件页数/大小: 10 页 / 422 K
品牌: RFMD [ RF MICRO DEVICES ]
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CGA-6618(Z)  
Absolute Maximum Ratings  
Parameter  
Caution! ESD sensitive device.  
Rating  
240  
Unit  
mA  
V
Exceeding any one or a combination of the Absolute Maximum Rating conditions may  
cause permanent damage to the device. Extended application of Absolute Maximum  
Rating conditions to the device may reduce device reliability. Specified typical perfor-  
mance or functional operation of the device under Absolute Maximum Rating condi-  
tions is not implied.  
Max Device Current (I )  
D
Max Device Voltage (V )  
7
D
Max RF Input Power  
+20  
dBm  
°C  
RoHS status based on EUDirective2002/95/EC (at time of this document revision).  
Max Junction Temp (T )  
+150  
J
The information in this publication is believed to be accurate and reliable. However, no  
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any  
infringement of patents, or other rights of third parties, resulting from its use. No  
license is granted by implication or otherwise under any patent or patent rights of  
RFMD. RFMD reserves the right to change component circuitry, recommended appli-  
cation circuitry and specifications at any time without prior notice.  
Operating Temp Range (T )  
L
-40 to +85  
°C  
Max Storage Temp  
Min Storage Temp  
+150  
-65  
°C  
°
Operation of this device beyond any one of these limits may cause permanent dam-  
age. For reliable continuous operation, the device voltage and current must not  
exceed the maximum operating values specified in the table on page one.  
Bias Conditions should also satisfy the following expression:  
I V <(T -T )/R , j-l and T =T  
LEAD  
D
D
J
L
TH  
L
Specification  
Parameter  
Unit  
Condition  
Min.  
Typ.  
81  
70  
Max.  
Worst Case Over Band, CSO  
Worst Case Over Band, CTB  
Worst Case Over Band, XMOD  
Device Operating Voltage  
Device Operating Current  
Thermal Resistance  
dBc  
dBc  
dBc  
V
mA  
°C/W  
79 Ch., Flat, +34dBmV  
79 Ch., Flat, +34dBmV  
79 Ch., Flat, +34dBmV  
63  
4.8  
144  
5.1  
160  
35  
5.4  
176  
(Junction to Lead)  
Test Conditions: V =8V, I =160mA Typ., R  
=33Ω, T =25°C, Z =Z =75Ω, Push Pull Application Circuit  
L S L  
S
D
BIAS  
Typical RF Performance: VS=8V, ID=160mA @ TL=+25°C, RBIAS=33 Ohms, Push-Pull Config.  
Gain vs. Frequency  
18  
17  
16  
15  
14  
13  
12  
11  
10  
-40C  
+25C  
+85C  
0
100  
200  
300  
400  
500 600  
700  
800 900 1000  
Frequency (MHz)  
|S11| (dB) vs. Frequency  
|S22| (dB) vs. Frequency  
0
-2  
0
-2  
-4  
-40C  
+25C  
+85C  
-40C  
+25C  
+85C  
-4  
-6  
-6  
-8  
-8  
-10  
-12  
-14  
-16  
-18  
-20  
-10  
-12  
-14  
-16  
-18  
-20  
0
100 200 300 400 500 600 700 800 900 1000  
0
100 200 300 400 500 600 700 800 900 1000  
Frequency (MHz)  
Frequency (MHz)  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
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EDS-101993 Rev L