RFHA1003
Absolute Maximum Ratings
Parameter
Rating
150
Unit
V
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Drain Voltage (V )
D
Gate Voltage (V )
-8 to +2
5
V
G
Gate Current (I )
mA
G
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Operational Voltage
RF- Input Power
32
27
V
dBm
Ruggedness (VSWR)
Storage Temperature Range
12:1
RoHS (Restriction of Hazardous Substances): Compliant per EU Directive
2002/95/EC.
-55 to +125
-40 to +85
°C
°C
Operating Temperature Range (T )
L
Operating Junction Temperature (T )
200
°C
J
Human Body Model
Class 1C
6
MTTF (T < 200°C, 95% Confidence Limits)*
Hours
°C/W
J
3 x 10
Thermal Resistance, R (junction to case)
9.8
TH
measured at T = 85°C, DC bias only
C
* MTTF - median time to failure for wear-out failure mode (30% I
Refer to product qualification report for FIT(random) failure rate.
degradation) which is determined by the technology process reliability.
DSS
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage
and current must not exceed the maximum operating values specified in the table on page two.
Bias Conditions should also satisfy the following expression: P
< (T - T )/R J - C and T = T
DISS
J
C
TH
C
CASE
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Recommended Operating
Conditions
Drain Voltage (V
)
28
-3
32
-2
V
V
DSQ
Gate Voltage (V
)
-5
GSQ
Drain Bias Current
55
mA
RF Input Power (P )
25
dBm
IN
Input Source VSWR
10:1
RF Performance Characteristics
Frequency Range
30
512
MHz
dB
Small signal 3dB bandwidth
= 30dBm, 100MHz
Linear Gain
19
P
OUT
Power Gain
16
2
dB
dB
P3DB, 100MHz
= 30dBm, 30MHz to 2500MHz
Gain Flatness
P
OUT
Gain Variation with Temperature
-0.02
dB/°C
dB
Input Return Loss (S
)
-10
11
Output Power (P
)
39.5
70
dBm
%
30MHz to 512MHz
30MHz to 512MHz
3dB
Power Added Efficiency (PAE)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
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