RFHA1003
30MHz to
512MHz, 9W
GaN Wide-
band Power
Amplifier
RFHA1003
30MHz TO 512MHz, 9W GaN WIDEBAND
POWER AMPLIFIER
Package: AlN Leadless Chip Carrier / SO8
Features
VGS
Pin 1
Advanced GaN HEMT Technology
Output Power of 9W
Advanced Heat-Sink Technology
30MHz to 512MHz
Instantaneous Bandwidth
Input Internally Matched to 50
28V Operation Typical
Performance
Output Power 39.5dBm
Gain 19dB
Power Added Efficiency 70%
-40°C to 85°C Operating
Temperature
RF IN
Pin 2,3
RF OUT / VDS
Pin 6,7
GND
BASE
Functional Block Diagram
Product Description
The RFHA1003 is a wideband Power Amplifier designed for CW and pulsed applica-
tions such as wireless infrastructure, RADAR, two way radios and general purpose
amplification. Using an advanced high power density Gallium Nitride (GaN) semi-
conductor process, these high-performance amplifiers achieve high efficiency, flat
gain, and large instantaneous bandwidth in a single amplifier design. The
RFHA1003 is an input matched GaN transistor packaged in an air cavity ceramic
package which provides excellent thermal stability through the use of advanced
heat sink and power dissipation technologies. Ease of integration is accomplished
through the incorporation of optimized input matching network within the package
that provides wideband gain and power performance in a single amplifier. An exter-
nal output match offers the flexibility of further optimizing power and efficiency for
any sub-band within the overall bandwidth.
Large Signal Models Available
Applications
Pre-Driver for Multiband Wireless
Infrastructure Transmitters
Class AB Operation for Public
Mobile Radio
Power Amplifier Stage for
Commercial Wireless
Infrastructure
General Purpose Tx Amplification
Test Instrumentation
Civilian and Military Radar
Ordering Information
RFHA1003S2
RFHA1003SB
RFHA1003SQ
RFHA1003SR
RFHA1003TR7
RFHA1003PCBA-410
2-Piece sample bag
5-Piece bag
25-Piece bag
100 Pieces on 7” short reel
750 Pieces on 7” reel
Fully assembled evaluation board 30MHz to 512MHz;
28V operation
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
DS120216
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
1 of 11
RFMD [ RF MICRO DEVICES ]
